This standard was last reviewed and confirmed in 2020. Therefore this version remains current.
ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.
Status: PublishedPublication date: 2014-09
Edition: 2Number of pages: 10
Technical Committee: ISO/TC 201/SC 6 Secondary ion mass spectrometry
- ICS :
- 71.040.40 Chemical analysis
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Stage: 90.93 (Confirmed)
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