Abstract

ISO 17560:2002 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal or amorphous-silicon specimens with boron atomic concentrations between 1×1016 atoms/cm3 and 1×1020 atoms/cm3, and to crater depths of 50 nm or deeper.


General information 

  • Status
     :  Withdrawn
    Publication date
     : 2002-07
  • Edition
     : 1
    Number of pages
     : 10
  • Technical Committee
     : ISO/TC 201/SC 6 Secondary ion mass spectrometry
  • ICS
     :
    71.040.40 Chemical analysis

Life cycle


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