ISO/PRF 5618-2
u
ISO/PRF 5618-2
83694

État actuel : Projet

Résumé

This document describes the method of determining the etch pit density, which is used to detect the dislocations and processing-introduced defects that occur on single-crystal GaN substrates or single-crystal GaN films. It is applicable to the defects specified in AWI 5618-1 from among the defects cropped out on the surface of the following types of GaN substrates or films: single-crystal GaN substrate; single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate; or single-crystal GaN film formed by heteroepitaxial growth on a single-crystal Al2O3, SiC, or Si substrate. It is applicable to defects with an etch pit density of 7 × 107 cm-2 or lower.

Informations générales

  •  : Projet
    : Texte final reçu ou FDIS enregistré pour approbation formelle [50.00]
  •  : 1
  • ISO/TC 206
    81.060.30 
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